Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

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Authors

ISA Fabio PEZZOLI Fabio ISELLA G. MEDUŇA Mojmír FALUB C.V. MÜLLER E. KREILIGER Thomas TABOADA A. G. VON KAENEL Hans MIGLIO Leo

Year of publication 2015
Type Article in Periodical
Magazine / Source Semiconductor Science and Technology
MU Faculty or unit

Central European Institute of Technology

Citation
Doi http://dx.doi.org/10.1088/0268-1242/30/10/105001
Field Solid matter physics and magnetism
Keywords multiple quantum wells; silicon germanium; photoluminescence; epitaxy; crystal quality
Description In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape.
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