Intersubband absorption of strain compensated, Si1-xGex valenceband quantum wells with 0.7<=x<=0.85
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Periodical |
| Magazine / Source | J. Appl. Phys. |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | X-RAY REFLECTION; CASCADE STRUCTURES; POROUS SILICON; ELECTROLUMINESCENCE; EMITTERS; NARROW |
| Description | Structural investigations by transmission electron microscopy and high-resolution x-ray reflection and diffraction showed that at a growth temperature around T=300C, samples in excellent compliance with the design parameters. Comparison of polarization-dependent intersubband absorption measurements with simulated intersubband absorption spectra has been done. |
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