HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED

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Authors	MEDUŇA Mojmír NOVÁK Jiří BAUER Günther FALUB Claudiu GRÜTZMACHER Detlev
Year of publication	2005
Type	Conference abstract
MU Faculty or unit	Faculty of Science
Citation
Description	We have investigated annealing behavior of strain compensated Si/SiGe MQW structures with different multilayer periods, grown by molecular beam epitaxy on Si0.75Ge0.25 pseudo-substrates.
Related projects:	Investigation of morphology of semiconductor multilayers using x-ray scattering Physical and chemical properties of advanced materials and structures