Study of oxide precipitates in silicon using X-ray diffraction techniques

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Authors

CAHA Ondřej BERNATOVÁ Silvie MEDUŇA Mojmír SVOBODA Milan BURŠÍK Jiří

Year of publication 2011
Type Article in Periodical
Magazine / Source physica status solidi (a), Applied research
MU Faculty or unit

Central European Institute of Technology

Citation
Doi http://dx.doi.org/10.1002/pssa.201184263
Field Solid matter physics and magnetism
Keywords CZOCHRALSKI-GROWN SILICON; DIFFUSE-SCATTERING; DEFECTS
Description The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement.
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