Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

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Authors

SCHMIDBAUER Martin UGUR Asli WOLLSTEIN C. HATAMI Fariba KATMIS Ferhat CAHA Ondřej MASSELINK W. T.

Year of publication 2012
Type Article in Periodical
Magazine / Source Journal of Applied Physics
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
Doi http://dx.doi.org/10.1063/1.3677995
Field Solid matter physics and magnetism
Keywords LAYERS; ENHANCEMENT; GAINP; DOTS
Description The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
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